features 1 h igh diode semiconductor to- 9 2 symbol parameter value unit v collector-base voltage 40 v v ce o collector-emitter voltage 25 v v eb o emitter-base voltage 5 v i c co llector current 500 ma p c co llector power dissipation 625 mw r j a thermal resistance from junction to ambient 416 /w t j jun ction temperature 150 t st g storage temperature -55 +150 classification of h fe electrical characteristics (t =25 unless otherwise specified s9 013 transistor( np n ) cbo t o-92 plastic-encap sulate transistors e b c complement ary to s9012 excellent h fe linearity parameter symbol test conditions m in t yp max unit collecto r -base breakdown voltage v (br) cbo i c = 100 a , i e =0 40 v collecto r -emitter breakdown voltage v (br) ceo i c = 1m a , i b =0 25 v emitter-ba s e breakdown voltage v (br) ebo i e = 100 a , i c =0 5 v collecto r cut-off current i cbo v cb = 40v , i e =0 0.1 a collecto r cut-off current i ceo v ce =20v , i e =0 0.1 a emitter cut-off current i ebo v eb = 5v , i c =0 0.1 a h fe(1) v ce =1v , i c =50ma 64 400 dc curr en t gain h fe(2) v ce =1v , i c = 500ma 40 collecto r -emitter saturation voltage v ce(sa t ) i c = 500ma, i b = 50ma 0.6 v base-emitter vo lt age v be(sat) i c = 500ma, i b = 50ma 1.2 v tr a nsition frequency f t v ce =6v , i c =20ma,f= 30mhz 150 mhz rank d e f g h i j range 64-9 1 78-112 96-135 112-166 144-202 190-300 300-400
h l j k ' l r g h 6 h p l f r q g x f w r u 7 \ s l f d o & k d u d f w h u l v w l f v 04 81 2 1 6 2 0 0 20 40 60 80 100 11 0 1 0 0 10 100 1000 1 10 100 10 100 0.1 1 10 1 10 100 10 100 1000 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 0.0 0 .2 0.4 0.6 0.8 1 .0 0.1 1 10 100 1 10 100 100 1000 collector current i c (ma) collector-em itter voltage v ce (v) stat i c characteristic c ommo n e mitter t a =25 i b =60ua 120ua 180ua 240ua 300ua 360ua 480ua 420ua f t ? ? i c h fe ?? com mo n em itter v ce =1v 3 30 500 t a =100 t a =25 dc current gain h fe collector current i c (m a) i c 2000 30 300 30 3 collector-emitter saturation voltag e v cesa t (mv) collector current i c (m a) =10 t a =25 t a =100 i c v c esat ? ? 500 500 100 30 10 3 3 0.3 20 c ob c ib reverse voltag e v ( v) f=1mhz i e =0/ i c =0 t a =25 v cb / v eb c ob / c ib ? ? capacitance c (p f ) 300 2 30 v ce =6v t a =25 transi tion fre quency f t (mhz) collector current i c (ma) collector power dissipation p c (mw) ambient t e mperature t a ( ) p c ? ? t a v be i c ? ? 30 3 0.3 t a =25 t a =100 commo n em itter v ce =1v collector current i c (ma) base- emm i ter voltage v be (v) 30 3 =10 base-emitt e r saturation voltage v besat (mv) collector current i c (ma) t a =25 t a =100 500 i c v b esat ? ?
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4 to-92 7 d s h d q g 5 h h o p a c k g e b o x b o x s i z e ( m m ) c a r t o n c a r t o n s i z e ( m m ) t o - 9 2 2 0 0 0 p c s 3 4 3 1 5 8 4 2 2 0 0 0 0 p c s 4 7 0 3 5 8 1 8 0 s y m b o l m m i n c h e s m i n n o m m a x m i n n o m m a x a 1 4 . 1 4 . 2 4 . 3 0 . 1 7 1 0 . 1 7 6 0 . 1 8 0 a 4 . 4 4 . 5 4 . 6 0 . 1 8 4 0 . 1 8 8 0 . 1 9 2 t 3 . 1 3 3 . 2 3 3 . 3 3 0 . 1 3 1 0 . 1 3 4 0 . 1 3 9 d 0 . 3 6 0 . 4 5 0 . 5 6 0 . 0 1 5 0 . 0 1 8 0 . 0 2 2 l 1 2 . 5 0 . 0 9 8 p 1 2 . 4 1 3 0 . 4 8 8 0 . 5 1 2 p 0 1 2 . 5 1 2 . 7 1 2 . 9 0 . 4 9 2 0 . 5 0 . 5 0 8 p 2 6 . 0 5 6 . 3 5 6 . 6 5 0 . 2 3 8 0 . 2 5 0 . 2 6 2 f 1 , f 2 2 . 7 5 3 . 0 0 3 . 2 5 f 3 , f 4 2 . 7 5 3 . 0 0 3 . 2 5 f 1 - f 2 0 . 4
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